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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BU180 DESCRIPTION *Collector Current -IC= 10A *DC Current Gain: hFE= 200(Min)@ IC= 5A *Low Collector Saturation Voltage APPLICATIONS *Designed for line operated switchmode applications such as: *Switching regulators *Inverters *Solenoid and relay drivers ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage w ww VALUE scs .i UNIT 320 V 200 V 8 V 10 A 50 W .cn mi e VEBO Emitter-Base Voltage IC Collector Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature PC TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BU180 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB=0 200 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 20mA B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 20mA B 2.0 V ICEO Collector Cutoff Current VCE= 200V; IB= 0 1.0 mA ICBO Collector Cutoff Current VCB= 320V;IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 8V; IC=0 hFE DC Current Gain w w scs .i w IC= 5A; VCE= 5V .cn mi e 200 10 mA isc Websitewww.iscsemi.cn 2 |
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